3.7 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK954R2-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 10220pF @ 25V 300W Through Hole TO-220-3
PHP191NQ06LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95.6nC @ 5V 7665pF @ 25V 300W Through Hole TO-220-3
BUK9Y4R4-40E,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Ta) 3.7 mOhm @ 25A, 10V 2.1V @ 1mA 26.8nC @ 5V 4077pF @ 25V 147W Surface Mount SC-100, SOT-669, 4-LFPAK
BUK964R2-55B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 3.7 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 10220pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHB191NQ06LT,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 3.7 mOhm @ 25A, 10V 2V @ 1mA 95.6nC @ 5V 7665pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HAT2099H-EL-E RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 50A (Ta) 3.7 mOhm @ 25A, 10V - 75nC @ 10V 4750pF @ 10V 30W Surface Mount SC-100, SOT-669
SI7856ADP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 3.7 mOhm @ 25A, 10V 3V @ 250µA 55nC @ 4.5V - 1.9W Surface Mount PowerPAK® SO-8
SI7856ADP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 15A (Ta) 3.7 mOhm @ 25A, 10V 3V @ 250µA 55nC @ 4.5V - 1.9W Surface Mount PowerPAK® SO-8