| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD18532Q5B | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 60V | 23A (Ta), 100A (Tc) | 3.2 mOhm @ 25A, 10V | 2.2V @ 250µA | 58nC @ 10V | 5070pF @ 30V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | |
| BUK663R2-40C,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 100A | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 125nC @ 10V | 8020pF @ 25V | 204W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK653R2-55C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 120A | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | 15300pF @ 25V | 306W | Through Hole | TO-220-3 | |
| BUK6E3R2-55C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 120A | 3.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 258nC @ 10V | 15300pF @ 25V | 306W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN3R0-60BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tmb) | 3.2 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 306W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PH3230S,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 100A (Tc) | 3.2 mOhm @ 25A, 10V | 3V @ 1mA | 42nC @ 5V | 4100pF @ 10V | 62.5W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| RJK0456DPB-00#J5 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 50A (Ta) | 3.2 mOhm @ 25A, 10V | - | 39nC @ 10V | 3000pF @ 10V | 65W | Surface Mount | SC-100, SOT-669 | |
| CSD18501Q5A | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 40V | 22A (Ta), 100A (Tc) | 3.2 mOhm @ 25A, 10V | 2.3V @ 250µA | 50nC @ 10V | 3840pF @ 20V | 3.1W | Surface Mount | 8-PowerTDFN | |
| SI4368DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 17A (Ta) | 3.2 mOhm @ 25A, 10V | 1.8V @ 250µA | 80nC @ 4.5V | 8340pF @ 15V | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4368DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 17A (Ta) | 3.2 mOhm @ 25A, 10V | 1.8V @ 250µA | 80nC @ 4.5V | 8340pF @ 15V | 1.6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
© 2016 Copyright
