270 mOhm @ 1.2A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF7506TRPBF INTERNATIONAL RECTIFIER CORP
2 P-Channel (Dual) 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 1.25W Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7506TR INTERNATIONAL RECTIFIER CORP
2 P-Channel (Dual) 30V 1.7A 270 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 1.25W Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
SI2337DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 2.2A (Tc) 270 mOhm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 40V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3
SI2337DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 1.2A (Ta), 2.2A (Tc) 270 mOhm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 40V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3