2.8 mOhm @ 100A, 10V,Rds On (Max) @ Id, Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPP028N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 2.8 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W Through Hole TO-220-3
IPB120N06S4-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 2.8 mOhm @ 100A, 10V 4V @ 120µA 160nC @ 10V 13150pF @ 25V 167W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI120N06S4-02 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 2.8 mOhm @ 100A, 10V 4V @ 140µA 195nC @ 10V 15750pF @ 25V 188W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP120N06S4-02 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 120A (Tc) 2.8 mOhm @ 100A, 10V 4V @ 140µA 195nC @ 10V 15750pF @ 25V 188W Through Hole TO-220-3
IPI028N08N3 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 2.8 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA