| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP027N08B_F102 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 80V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | 13530pF @ 40V | 246W | Through Hole | TO-220-3 | |
| FDP027N08B | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 80V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | 13530pF @ 40V | 246W | Through Hole | TO-220-3 | |
| IPB027N10N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 120A | 2.7 mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPI100N04S4-H2 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.7 mOhm @ 100A, 10V | 4V @ 70µA | 90nC @ 10V | 7180pF @ 25V | 115W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPP100N04S4-H2 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tc) | 2.7 mOhm @ 100A, 10V | 4V @ 70µA | 90nC @ 10V | 7180pF @ 25V | 115W | Through Hole | TO-220-3 |
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