| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHP36N03LT,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 43.4A | 17 mOhm @ 25A, 10V | 2V @ 250µA | 18.5nC @ 10V | 690pF @ 25V | 57.6W | Through Hole | TO-220-3 | |
| PHD36N03LT,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 43.4A (Tc) | 17 mOhm @ 25A, 10V | 2V @ 250µA | 18.5nC @ 10V | 690pF @ 25V | 57.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| ATP107-TL-H | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 40V | 50A (Ta) | 17 mOhm @ 25A, 10V | - | 47nC @ 10V | 2400pF @ 20V | 50W | Surface Mount | ATPAK (2 leads+tab) | |
| NP50P06KDG-E1-AY | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 60V | 50A (Tc) | 17 mOhm @ 25A, 10V | 2.5V @ 1mA | 95nC @ 10V | 5000pF @ 10V | 1.8W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| 2SK2376(Q) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 45A (Ta) | 17 mOhm @ 25A, 10V | 2V @ 1mA | 110nC @ 10V | 3350pF @ 10V | 100W | Through Hole | TO-220-3, Short Tab |
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