MOSFET N-Channel, Metal Oxide,FET Type
11 mOhm @ 30A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTD4970NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.5A (Ta), 36A (Tc) 11 mOhm @ 30A, 10V 2.5V @ 250µA 8.2nC @ 4.5V 774pF @ 15V 1.38W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7L11-34ARC,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 34V 75A (Tc) 11 mOhm @ 30A, 10V 3.8V @ 1mA 53nC @ 10V 2506pF @ 25V 172W Through Hole TO-220-3
NTD4970N-35G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.5A (Ta), 36A (Tc) 11 mOhm @ 30A, 10V 2.5V @ 250µA 8.2nC @ 4.5V 774pF @ 15V 1.38W Through Hole TO-251-3 Stub Leads, IPak
2SK2267(Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 60V 60A (Ta) 11 mOhm @ 30A, 10V 2V @ 1mA 170nC @ 10V 5400pF @ 10V 150W Through Hole TO-3PL