11 mOhm @ 12A, 10V,Rds On (Max) @ Id, Vgs
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO4566 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 11 mOhm @ 12A, 10V 2.3V @ 250µA 12.2nC @ 10V 542pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4894BDY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta) 11 mOhm @ 12A, 10V 3V @ 250µA 38nC @ 10V 1580pF @ 15V 1.4W Surface Mount 8-SOIC (0.154", 3.90mm Width)
DMG4406LSS-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 10.3A (Ta) 11 mOhm @ 12A, 10V 2V @ 250µA 26.7nC @ 10V 1281pF @ 15V 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS6694 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 11 mOhm @ 12A, 10V 3V @ 250µA 19nC @ 5V 1293pF @ 15V 1.2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPCA8030-H(TE12LQM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta) 11 mOhm @ 12A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN
TPCA8031-H(TE12L,Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta) 11 mOhm @ 12A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN
SIS406DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 9A (Ta) 11 mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1100pF @ 15V 1.5W Surface Mount PowerPAK® 1212-8
SI7196DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 16A (Tc) 11 mOhm @ 12A, 10V 3V @ 250µA 38nC @ 10V 1577pF @ 15V 41.6W Surface Mount PowerPAK® SO-8
SI4894BDY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta) 11 mOhm @ 12A, 10V 3V @ 250µA 38nC @ 10V 1580pF @ 15V 1.4W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI7196DP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 16A (Tc) 11 mOhm @ 12A, 10V 3V @ 250µA 38nC @ 10V 1577pF @ 15V 41.6W Surface Mount PowerPAK® SO-8