| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD10AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta), 50A (Tc) | 10.5 mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | 1840pF @ 25V | 135W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FDD10AN06A0_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 11A (Ta) | 10.5 mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | 1840pF @ 25V | 135W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPD50P03P4L-11 | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 30V | 50A (Tc) | 10.5 mOhm @ 50A, 10V | 2V @ 85µA | 55nC @ 10V | 3770pF @ 25V | 58W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| BSC105N10LSF G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 156W | Surface Mount | 8-PowerTDFN |
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