| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP80N06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 74nC @ 10V | 3190pF @ 25V | 176W | Through Hole | TO-220-3 | |
| NTB5411NT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 130nC @ 10V | 4500pF @ 25V | 166W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NTP5411NG | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 130nC @ 10V | 4500pF @ 25V | 166W | Through Hole | TO-220-3 | |
| STP80NE06-10 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 140nC @ 10V | 10000pF @ 25V | 150W | Through Hole | TO-220-3 | |
| STW80NE06-10 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | 7600pF @ 25V | 250W | Through Hole | TO-247-3 |
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