1.1 Ohm @ 3A, 10V,Rds On (Max) @ Id, Vgs
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQP6N40CF FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 400V 6A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 20nC @ 10V 625pF @ 25V 73W Through Hole TO-220-3
IXTP6N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 50µA 14.6nC @ 10V 740pF @ 25V 100W Through Hole TO-220-3
IXTA6N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 50µA 14.6nC @ 10V 740pF @ 25V 100W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP6P25 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 250V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 250µA 27nC @ 10V 780pF @ 25V 90W Through Hole TO-220-3
JAN2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW Through Hole TO-205AF
JANTX2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTXV2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JAN2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTX2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTXV2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -