| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSR1N60BTM_WS | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 12 Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | 215pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IXTF1N450 | IXYS CORP | MOSFET N-Channel, Metal Oxide | 4500V (4.5kV) | 900mA (Tc) | 85 Ohm @ 50mA, 10V | 6.5V @ 250µA | 40nC @ 10V | 1730pF @ 25V | 165W | Through Hole | - | |
| FQPF1N50 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 500V | 900mA (Tc) | 9 Ohm @ 450mA, 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | 16W | Through Hole | TO-220-3 Full Pack | |
| FQPF1N60 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 11.5 Ohm @ 450mA, 10V | 5V @ 250µA | 6nC @ 10V | 150pF @ 25V | 21W | Through Hole | TO-220-3 Full Pack | |
| FQPF1N60T | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 11.5 Ohm @ 450mA, 10V | 5V @ 250µA | 6nC @ 10V | 150pF @ 25V | 21W | Through Hole | TO-220-3 Full Pack | |
| SSR1N60BTM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 12 Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | 215pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SSR1N60BTM_F080 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 12 Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | 215pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SSU1N60BTU_WS | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 600V | 900mA (Tc) | 12 Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | 215pF @ 25V | 2.5W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| SI1304BDL-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 900mA (Tc) | 270 mOhm @ 900mA, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | 100pF @ 15V | 370mW | Surface Mount | SC-70, SOT-323 | |
| SI1304BDL-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 900mA (Tc) | 270 mOhm @ 900mA, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | 100pF @ 15V | 370mW | Surface Mount | SC-70, SOT-323 |
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