9.7A (Ta),Current - Continuous Drain (Id) @ 25°C
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMG4468LK3-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 9.7A (Ta) 16 mOhm @ 11.6A, 10V 1.95V @ 250µA 18.85nC @ 10V 867pF @ 15V 1.68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TK10Q60W,S1VQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 430 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 80W - -
TK10E60W,S1VX TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 100W Through Hole TO-220-3
TK10A60W,S4VX TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 30W Through Hole TO-220-3 Full Pack
TK10P60W,RVQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 430 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 80W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AO4419 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 30V 9.7A (Ta) 20 mOhm @ 9.7A, 10V 2.7V @ 250µA 32nC @ 10V 1900pF @ 15V 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDW264P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 9.7A (Ta) 10 mOhm @ 9.7A, 4.5V 1.5V @ 250µA 135nC @ 5V 7225pF @ 10V 600mW Surface Mount 8-TSSOP (0.173", 4.40mm Width)
NTP75N03R ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 9.7A (Ta) 8 mOhm @ 20A, 10V 2V @ 250µA 13.2nC @ 5V 1333pF @ 20V 1.25W Through Hole TO-220-3
NTP75N03RG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 25V 9.7A (Ta) 8 mOhm @ 20A, 10V 2V @ 250µA 13.2nC @ 5V 1333pF @ 20V 1.25W Through Hole TO-220-3
TK10V60W,LVQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 88.3W Surface Mount 4-VSFN Exposed Pad