860mA (Ta),Current - Continuous Drain (Id) @ 25°C
Surface Mount,Mounting Type
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP2104V-7 DIODES INC
MOSFET P-Channel, Metal Oxide 20V 860mA (Ta) 150 mOhm @ 950mA, 4.5V 1V @ 250µA - 320pF @ 16V 170mW Surface Mount SOT-563, SOT-666
NTZS3151PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 860mA (Ta) 150 mOhm @ 950mA, 4.5V 1V @ 250µA 5.6nC @ 4.5V 458pF @ 16V 170mW Surface Mount SOT-563, SOT-666
NTZS3151PT5G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 860mA (Ta) 150 mOhm @ 950mA, 4.5V 1V @ 250µA 5.6nC @ 4.5V 458pF @ 16V 170mW Surface Mount SOT-563, SOT-666
SI1305DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305DL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323