30V,Drain to Source Voltage (Vdss)
8.6A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3008SFG-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 900mW Surface Mount 8-PowerWDFN
NTMS4937NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 6.5 mOhm @ 7.5A, 10V 2.5V @ 250µA 38.5nC @ 10V 2563pF @ 25V 810mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
DMP3008SFG-13 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 900mW Surface Mount 8-PowerVDFN
NTMS4700NR2 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 7.2 mOhm @ 13A, 10V 3V @ 250µA 24nC @ 4.5V 1600pF @ 24V 860mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS4700NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 7.2 mOhm @ 13A, 10V 3V @ 250µA 24nC @ 4.5V 1600pF @ 24V 860mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI6404DQ-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6404DQ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)