75A (Ta),Current - Continuous Drain (Id) @ 25°C
2.1V @ 1mA,Vgs(th) (Max) @ Id
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK968R3-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 6.4 mOhm @ 20A, 10V 2.1V @ 1mA 20.9nC @ 5V 2600pF @ 25V 96W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9611-80E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 75A (Ta) 10 mOhm @ 20A, 10V 2.1V @ 1mA 48.8nC @ 5V 7149pF @ 25V 182W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK964R1-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 3.5 mOhm @ 25A, 10V 2.1V @ 1mA 52.1nC @ 5V 6650pF @ 25V 182W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK958R5-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 6.6 mOhm @ 20A, 10V 2.1V @ 1mA 20.9nC @ 5V 2600pF @ 25V 96W Through Hole TO-220-3
BUK9E8R5-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 6.6 mOhm @ 20A, 10V 2.1V @ 1mA 20.9nC @ 5V 2600pF @ 25V 96W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK965R4-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 4.4 mOhm @ 25A, 10V 2.1V @ 1mA 33.9nC @ 5V 4483pF @ 25V 137W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK966R5-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 75A (Ta) 5.9 mOhm @ 25A, 10V 2.1V @ 1mA 48nC @ 5V 6900pF @ 25V 182W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK969R0-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 75A (Ta) 8 mOhm @ 20A, 10V 2.1V @ 1mA 29.8nC @ 5V 4350pF @ 25V 137W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB