| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFX73N30Q | IXYS CORP | MOSFET N-Channel, Metal Oxide | 300V | 73A (Tc) | 45 mOhm @ 500mA, 10V | 4V @ 4mA | 195nC @ 10V | 5400pF @ 25V | 500W | Through Hole | TO-247-3 | |
| PSMN020-150W,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 150V | 73A (Tc) | 20 mOhm @ 25A, 10V | 4V @ 1mA | 227nC @ 10V | 9537pF @ 25V | 300W | Through Hole | TO-247-3 | |
| SIHG73N60E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 | |
| SIHW73N60E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 | |
| SIHG73N60E-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 600V | 73A (Tc) | 39 mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | 7700pF @ 100V | 520W | Through Hole | TO-247-3 |
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