7.6A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDS8449 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 40V 7.6A (Ta) 29 mOhm @ 7.6A, 10V 3V @ 250µA 11nC @ 5V 760pF @ 20V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS8449_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 40V 7.6A (Ta) 29 mOhm @ 7.6A, 10V 3V @ 250µA 11nC @ 10V 760pF @ 20V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
NVTFS5826NLTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 7.6A (Ta) 24 mOhm @ 10A, 10V 2.5V @ 250µA 16nC @ 10V 850pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
PHX14NQ20T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 7.6A (Ta) 230 mOhm @ 7A, 10V 4V @ 1mA 38nC @ 10V 1500pF @ 25V 30W Through Hole TO-220-3 Isolated Tab
NVTFS5826NLTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 60V 7.6A (Ta) 24 mOhm @ 10A, 10V 2.5V @ 250µA 16nC @ 10V 850pF @ 25V 3.2W Surface Mount 8-WDFN Exposed Pad
SI7852DP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 80V 7.6A (Ta) 16.5 mOhm @ 10A, 10V 2V @ 250µA 41nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8
SI7852DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 80V 7.6A (Ta) 16.5 mOhm @ 10A, 10V 2V @ 250µA 41nC @ 10V - 1.9W Surface Mount PowerPAK® SO-8