| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSO200P03S H | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 20 mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | 2330pF @ 25V | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| BSO200P03S | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 20 mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | 2330pF @ 25V | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| PMT21EN,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 7.4A (Ta) | 21 mOhm @ 7.4A, 10V | 2.5V @ 250µA | 14.4nC @ 15V | 588pF @ 15V | 820mW | - | - | |
| PMT21EN,135 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 7.4A (Ta) | 21 mOhm @ 7.4A, 10V | 2.5V @ 250µA | 14.4nC @ 10V | 588pF @ 15V | 820mW | Surface Mount | TO-261-4, TO-261AA | |
| NTMS4705NR2G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 7.4A (Ta) | 10 mOhm @ 12A, 10V | 3V @ 250µA | 18nC @ 4.5V | 1078pF @ 24V | 850mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI7423DN-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 18 mOhm @ 11.7A, 10V | 3V @ 250µA | 56nC @ 10V | - | 1.5W | Surface Mount | PowerPAK® 1212-8 | |
| SI7423DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 18 mOhm @ 11.7A, 10V | 3V @ 250µA | 56nC @ 10V | - | 1.5W | Surface Mount | PowerPAK® 1212-8 | |
| SI4835BDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 18 mOhm @ 9.6A, 10V | 3V @ 250µA | 37nC @ 5V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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