65A,Current - Continuous Drain (Id) @ 25°C
65A,Current - Continuous Drain (Id) @ 25°C
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQP65N06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 65A 16 mOhm @ 32.5A, 10V 4V @ 250µA 65nC @ 10V 2410pF @ 25V 150W Through Hole TO-220-3
FQA65N20 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 200V 65A 32 mOhm @ 32.5A, 10V 5V @ 250µA 200nC @ 10V 7900pF @ 25V 310W Through Hole TO-3P-3, SC-65-3
FD6M043N08 FAIRCHILD SEMICONDUCTOR CORP
2 N-Channel (Dual) 75V 65A 4.3 mOhm @ 40A, 10V 4V @ 250µA 148nC @ 10V 6180pF @ 25V - Through Hole EPM15
BSC886N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 65A 6 mOhm @ 30A, 10V 2.2V @ 250µA 26nC @ 10V 2100pF @ 15V 39W Surface Mount 8-PowerTDFN
FMM65-015P IXYS CORP
2 N-Channel (Dual) 150V 65A 22 mOhm @ 50A, 10V 4V @ 1mA 230nC @ 10V - - Through Hole -
APTM100A13SG MICROSEMI POWER PRODUCTS GROUP
2 N-Channel (Half Bridge) 1000V (1kV) 65A 156 mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W Chassis Mount SP6
APTM100A13SCG MICROSEMI POWER PRODUCTS GROUP
2 N-Channel (Half Bridge) 1000V (1kV) 65A 156 mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W Chassis Mount SP6
APTM100A13DG MICROSEMI POWER PRODUCTS GROUP
2 N-Channel (Half Bridge) 1000V (1kV) 65A 156 mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W Chassis Mount SP6
APTM100U13SG MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 1000V (1kV) 65A 145 mOhm @ 32.5A, 10V 4V @ 10mA 2000nC @ 10V 31600pF @ 25V 1250W Chassis Mount J3 Module
RJK0346DPA-01#J0B RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 65A 1.8 mOhm @ 25A, 10V - 49nC @ 10V 7650pF @ 10V 65W Surface Mount 8-WFDFN Exposed Pad