FQP65N06 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
60V
|
65A
|
16 mOhm @ 32.5A, 10V
|
4V @ 250µA
|
65nC @ 10V
|
2410pF @ 25V
|
150W
|
Through Hole
|
TO-220-3
|
FQA65N20 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
200V
|
65A
|
32 mOhm @ 32.5A, 10V
|
5V @ 250µA
|
200nC @ 10V
|
7900pF @ 25V
|
310W
|
Through Hole
|
TO-3P-3, SC-65-3
|
FD6M043N08 |
FAIRCHILD SEMICONDUCTOR CORP |
|
2 N-Channel (Dual)
|
75V
|
65A
|
4.3 mOhm @ 40A, 10V
|
4V @ 250µA
|
148nC @ 10V
|
6180pF @ 25V
|
-
|
Through Hole
|
EPM15
|
BSC886N03LS G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
65A
|
6 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
26nC @ 10V
|
2100pF @ 15V
|
39W
|
Surface Mount
|
8-PowerTDFN
|
FMM65-015P |
IXYS CORP |
|
2 N-Channel (Dual)
|
150V
|
65A
|
22 mOhm @ 50A, 10V
|
4V @ 1mA
|
230nC @ 10V
|
-
|
-
|
Through Hole
|
-
|
APTM100A13SG |
MICROSEMI POWER PRODUCTS GROUP |
|
2 N-Channel (Half Bridge)
|
1000V (1kV)
|
65A
|
156 mOhm @ 32.5A, 10V
|
5V @ 6mA
|
562nC @ 10V
|
15200pF @ 25V
|
1250W
|
Chassis Mount
|
SP6
|
APTM100A13SCG |
MICROSEMI POWER PRODUCTS GROUP |
|
2 N-Channel (Half Bridge)
|
1000V (1kV)
|
65A
|
156 mOhm @ 32.5A, 10V
|
5V @ 6mA
|
562nC @ 10V
|
15200pF @ 25V
|
1250W
|
Chassis Mount
|
SP6
|
APTM100A13DG |
MICROSEMI POWER PRODUCTS GROUP |
|
2 N-Channel (Half Bridge)
|
1000V (1kV)
|
65A
|
156 mOhm @ 32.5A, 10V
|
5V @ 6mA
|
562nC @ 10V
|
15200pF @ 25V
|
1250W
|
Chassis Mount
|
SP6
|
APTM100U13SG |
MICROSEMI POWER PRODUCTS GROUP |
|
MOSFET N-Channel, Metal Oxide
|
1000V (1kV)
|
65A
|
145 mOhm @ 32.5A, 10V
|
4V @ 10mA
|
2000nC @ 10V
|
31600pF @ 25V
|
1250W
|
Chassis Mount
|
J3 Module
|
RJK0346DPA-01#J0B |
RENESAS ELECTRONICS CORP |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
65A
|
1.8 mOhm @ 25A, 10V
|
-
|
49nC @ 10V
|
7650pF @ 10V
|
65W
|
Surface Mount
|
8-WFDFN Exposed Pad
|