MOSFET N-Channel, Metal Oxide,FET Type
30V,Drain to Source Voltage (Vdss)
63A (Tc),Current - Continuous Drain (Id) @ 25°C
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PH9930L,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 63A (Tc) 9.9 mOhm @ 25A, 10V 2.15V @ 1mA 13.3nC @ 4.5V 1565pF @ 12V 62.5W Surface Mount SC-100, SOT-669, 4-LFPAK
PH9030L,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 63A (Tc) 9 mOhm @ 25A, 10V 2V @ 1mA 13.3nC @ 4.5V 1565pF @ 12V 62.5W Surface Mount SC-100, SOT-669, 4-LFPAK
SUD50N03-09P-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 63A (Tc) 9.5 mOhm @ 20A, 10V 3V @ 250µA 16nC @ 4.5V 2200pF @ 25V 65.2W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N03-09P-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 63A (Tc) 9.5 mOhm @ 20A, 10V 3V @ 250µA 16nC @ 4.5V 2200pF @ 25V 65.2W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63