63A,Current - Continuous Drain (Id) @ 25°C
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFN80N50Q3 IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 63A 65 mOhm @ 40A, 10V 6.5V @ 8mA 200nC @ 10V 10000pF @ 25V 780W Chassis Mount SOT-227-4, miniBLOC
BSC159N10LSF G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 63A 15.9 mOhm @ 50A, 10V 2.4V @ 72µA 35nC @ 10V 2500pF @ 50V 114W Surface Mount 8-PowerTDFN
APT55M65JFLL MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 550V 63A 65 mOhm @ 31.5A, 10V 5V @ 5mA 205nC @ 10V 9165pF @ 25V 595W Chassis Mount SOT-227-4, miniBLOC
BUK9520-100B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 18.5 mOhm @ 25A, 10V 2V @ 1mA 53.4nC @ 5V 5657pF @ 25V 203W Through Hole TO-220-3
BUK9520-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 19 mOhm @ 25A, 10V 2V @ 1mA - 6385pF @ 25V 200W Through Hole TO-220-3
BUK7520-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 20 mOhm @ 25A, 10V 4V @ 1mA - 4373pF @ 25V 200W Through Hole TO-220-3
BUK7620-100A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 20 mOhm @ 25A, 10V 4V @ 1mA - 4373pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9214-30A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 63A 12 mOhm @ 25A, 10V 2V @ 1mA 31nC @ 5V 2317pF @ 25V 107W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63