DMG1012T-7 |
DIODES INC |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
630mA (Ta)
|
400 mOhm @ 600mA, 4.5V
|
1V @ 250µA
|
0.74nC @ 4.5V
|
60.67pF @ 16V
|
280mW
|
Surface Mount
|
SOT-523
|
DMN2004K-7 |
DIODES INC |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
630mA (Ta)
|
550 mOhm @ 540mA, 4.5V
|
1V @ 250µA
|
-
|
150pF @ 16V
|
350mW
|
Surface Mount
|
TO-236-3, SC-59, SOT-23-3
|
IRFD224PBF |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
250V
|
630mA (Ta)
|
1.1 Ohm @ 380mA, 10V
|
4V @ 250µA
|
14nC @ 10V
|
260pF @ 25V
|
1W
|
Through Hole
|
4-DIP (0.300", 7.62mm)
|
SI1012CR-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
630mA (Ta)
|
-
|
1V @ 250µA
|
-
|
43pF @ 10V
|
240mW
|
Surface Mount
|
SC-75, SOT-416
|
IRFD224 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
250V
|
630mA (Ta)
|
1.1 Ohm @ 380mA, 10V
|
4V @ 250µA
|
14nC @ 10V
|
260pF @ 25V
|
1W
|
Through Hole
|
4-DIP (0.300", 7.62mm)
|