| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP7030BL | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 60A | 9 mOhm @ 30A, 10V | 3V @ 250µA | 24nC @ 5V | 1760pF @ 15V | 60W | Through Hole | TO-220-3 | |
| HUF75332P3 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 55V | 60A | 19 mOhm @ 60A, 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | 145W | Through Hole | TO-220-3 | |
| FD6M045N06 | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Dual) | 60V | 60A | 4.5 mOhm @ 40A, 10V | 4V @ 250µA | 87nC @ 10V | 3890pF @ 25V | - | Through Hole | EPM15 | |
| NP60N04NUK-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 60A | 4.3 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3680pF @ 25V | 1.8W | Through Hole | TO-262-3 Full Pack, I²Pak | |
| NP60N055NUK-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 60A | 6 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3750pF @ 25V | 1.8W | Through Hole | TO-262-3 Full Pack, I²Pak | |
| NP60N04MUK-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 40V | 60A | 4.3 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3680pF @ 25V | 1.8W | Through Hole | TO-220-3 Full Pack | |
| NP60N055MUK-S18-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 55V | 60A | 6 mOhm @ 30A, 10V | 4V @ 250µA | 63nC @ 10V | 3750pF @ 25V | 1.8W | Through Hole | TO-220-3 | |
| TK60E08K3,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 75V | 60A | 9 mOhm @ 30A, 10V | - | 75nC @ 10V | - | 128W | Through Hole | TO-220-3 |
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