| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPI60R520CP | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 340µA | 31nC @ 10V | 630pF @ 100V | 66W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF9520NL | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 3.8W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF9520NLPBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 3.8W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF9520L | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 6.8A (Tc) | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 3.7W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
© 2016 Copyright
