100V,Drain to Source Voltage (Vdss)
50A (Tc),Current - Continuous Drain (Id) @ 25°C
TO-220-3,Package / Case
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDP150N10A_F102 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 15 mOhm @ 50A, 10V 4V @ 250µA 21nC @ 10V 1440pF @ 50V 91W Through Hole TO-220-3
STP40NF10 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 28 mOhm @ 25A, 10V 4V @ 250µA 62nC @ 10V 2180pF @ 25V 150W Through Hole TO-220-3
FDP150N10A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 15 mOhm @ 50A, 10V 4V @ 250µA 21nC @ 10V 1440pF @ 50V 91W Through Hole TO-220-3
IPP50N10S3L-16 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 15.7 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 100W Through Hole TO-220-3
2SK3480-AZ RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 31 mOhm @ 25A, 10V - 74nC @ 10V 3600pF @ 10V 1.5W Through Hole TO-220-3
STP50NE10 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 27 mOhm @ 25A, 10V 4V @ 250µA 166nC @ 10V 6000pF @ 25V 180W Through Hole TO-220-3
SUP50N10-21P-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 50A (Tc) 21 mOhm @ 10A, 10V 4V @ 250µA 68nC @ 10V 2055pF @ 50V 3.1W Through Hole TO-220-3