5.9A (Ta),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN2050L-7 DIODES INC
MOSFET N-Channel, Metal Oxide 20V 5.9A (Ta) 29 mOhm @ 5A, 4.5V 1.4V @ 250µA 6.7nC @ 4.5V 532pF @ 10V 1.4W Surface Mount TO-236-3, SC-59, SOT-23-3
PMV31XN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 20V 5.9A (Ta) 37 mOhm @ 1.5A, 4.5V 1.5V @ 1mA 5.8nC @ 4.5V 410pF @ 20V 2W Surface Mount TO-236-3, SC-59, SOT-23-3
TPC6008-H(TE85L,FM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 5.9A (Ta) 60 mOhm @ 3A, 10V 2.3V @ 100µA 4.8nC @ 10V 300pF @ 10V - Surface Mount SOT-23-6 Thin, TSOT-23-6
SI3473DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 23 mOhm @ 7.9A, 4.5V 1V @ 250µA 33nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI4346DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 5.9A (Ta) 23 mOhm @ 8A, 10V 2V @ 250µA 10nC @ 4.5V - 1.31W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI3473DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 23 mOhm @ 7.9A, 4.5V 1V @ 250µA 33nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI5473DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI5473DC-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 12V 5.9A (Ta) 27 mOhm @ 5.9A, 4.5V 1V @ 250µA 32nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI4346DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 5.9A (Ta) 23 mOhm @ 8A, 10V 2V @ 250µA 10nC @ 4.5V - 1.31W Surface Mount 8-SOIC (0.154", 3.90mm Width)