MOSFET P-Channel, Metal Oxide,FET Type
5.7A (Ta),Current - Continuous Drain (Id) @ 25°C
Surface Mount,Mounting Type
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTTFS5116PLTWG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 5.7A (Ta) 52 mOhm @ 6A, 10V 3V @ 250µA 25nC @ 10V 1258pF @ 30V 3.2W Surface Mount 8-WDFN Exposed Pad
NTTFS5116PLTAG ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 60V 5.7A (Ta) 52 mOhm @ 6A, 10V 3V @ 250µA 25nC @ 10V 1258pF @ 30V 3.2W Surface Mount 8-WDFN Exposed Pad
PMN27XPE,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 20V 5.7A (Ta) 30 mOhm @ 3A, 4.5V 1.25V @ 250µA 22.5nC @ 4.5V 1770pF @ 10V 530mW Surface Mount SC-74, SOT-457
PMN42XPE,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 20V 5.7A (Ta) 46 mOhm @ 3A, 4.5V 1.25V @ 250µA 17.3nC @ 4.5V 1410pF @ 10V 500mW Surface Mount SC-74, SOT-457
PMN27UP,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 20V 5.7A (Ta) 32 mOhm @ 2.4A, 4.5V 950mV @ 250µA 31nC @ 4.5V 2340pF @ 10V 540mW Surface Mount SC-74, SOT-457
SI4431BDY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 5.7A (Ta) 30 mOhm @ 7.5A, 10V 3V @ 250µA 20nC @ 5V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4431BDY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 5.7A (Ta) 30 mOhm @ 7.5A, 10V 3V @ 250µA 20nC @ 5V - 1.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)