| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMWD19UN,518 | NXP SEMICONDUCTORS | 2 N-Channel (Dual) | 30V | 5.6A | 23 mOhm @ 3.5A, 4.5V | 700mV @ 1mA | 28nC @ 5V | 1478pF @ 10V | 2.3W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | |
| IRFR9120TRLPBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 5.6A | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4561DY-T1-GE3 | VISHAY SILICONIX | N and P-Channel | 40V | 5.6A | 35.5 mOhm @ 5A, 10V | 3V @ 250µA | 20nC @ 10V | 640pF @ 20V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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