5.5A (Ta),Current - Continuous Drain (Id) @ 25°C
SOT-23-6 Thin, TSOT-23-6,Package / Case
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDC645N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 5.5A (Ta) 26 mOhm @ 6.2A, 10V 2V @ 250µA 21nC @ 4.5V 1460pF @ 15V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
FDC602P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 5.5A (Ta) 35 mOhm @ 5.5A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1456pF @ 10V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
FDC604P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 5.5A (Ta) 33 mOhm @ 5.5A, 4.5V 1.5V @ 250µA 30nC @ 4.5V 1926pF @ 10V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
TPC6111(TE85L,F,M) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 5.5A (Ta) 40 mOhm @ 2.8A, 4.5V 1V @ 1mA 10nC @ 5V 700pF @ 10V - Surface Mount SOT-23-6 Thin, TSOT-23-6
FDC602P_F095 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 5.5A (Ta) 35 mOhm @ 5.5A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1456pF @ 10V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
FDC645N_F095 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 5.5A (Ta) 26 mOhm @ 6.2A, 10V 2V @ 250µA 21nC @ 4.5V 1460pF @ 15V 800mW Surface Mount SOT-23-6 Thin, TSOT-23-6
TPC6103(TE85L,F,M) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 12V 5.5A (Ta) 35 mOhm @ 2.8A, 4.5V 1.2V @ 200µA 20nC @ 5V 1520pF @ 10V - Surface Mount SOT-23-6 Thin, TSOT-23-6
TPC6104(TE85L,F,M) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 5.5A (Ta) 40 mOhm @ 2.8A, 4.5V 1.2V @ 200µA 19nC @ 5V 1430pF @ 10V - Surface Mount SOT-23-6 Thin, TSOT-23-6