| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCPB5530X,115 | NXP SEMICONDUCTORS | N and P-Channel | 20V | 5.3A, 4.5A | 34 mOhm @ 3A, 4.5V | 900mV @ 250µA | 21.7nC @ 4.5V | 660pF @ 10V | 490mW | Surface Mount | 6-UDFN Exposed Pad | |
| SI4565ADY-T1-E3 | VISHAY SILICONIX | N and P-Channel | 40V | 5.3A, 4.5A | 39 mOhm @ 5A, 10V | 2.2V @ 250µA | 22nC @ 10V | 625pF @ 20V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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