5.2A (Tc),Current - Continuous Drain (Id) @ 25°C
26 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF7P20 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 200V 5.2A (Tc) 690 mOhm @ 2.6A, 10V 5V @ 250µA 25nC @ 10V 770pF @ 25V 45W Through Hole TO-220-3 Full Pack
STB9NK80Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 40nC @ 10V 1138pF @ 25V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB7NK80ZT4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 56nC @ 10V 1138pF @ 25V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP7NK80ZFP STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 56nC @ 10V 1138pF @ 25V 30W Through Hole TO-220-3 Full Pack
STP7NK80Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 56nC @ 10V 1138pF @ 25V 125W Through Hole TO-220-3
FQAF7N90 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 900V 5.2A (Tc) 1.55 Ohm @ 2.6A, 10V 5V @ 250µA 59nC @ 10V 2280pF @ 25V 107W Through Hole SC-94
STB7NK80Z-1 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 56nC @ 10V 1138pF @ 25V 125W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRF620 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 200V 5.2A (Tc) 800 mOhm @ 3A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 70W Through Hole TO-220-3
IRF620SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 5.2A (Tc) 800 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF620PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 5.2A (Tc) 800 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 50W Through Hole TO-220-3