400mA (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STQ2NK60ZR-AP STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 400mA (Tc) 8 Ohm @ 700mA, 10V 4.5V @ 50µA 10nC @ 10V 170pF @ 25V 3W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
STQ1HN60K3-AP STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 400mA (Tc) 8 Ohm @ 600mA, 10V 4.5V @ 50µA 9.5nC @ 10V 140pF @ 50V 3W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
STQ1HNK60R-AP STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 400mA (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 3W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
STN1HNK60 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 400mA (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 3.3W Surface Mount TO-261-4, TO-261AA
NX3008NBK,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 400mA (Tc) 1.4 Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68nC @ 4.5V 50pF @ 15V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI1300BDL-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 400mA (Tc) 850 mOhm @ 250mA, 4.5V 1V @ 250µA 0.84nC @ 4.5V 35pF @ 10V 200mW Surface Mount SC-70, SOT-323
SI1300BDL-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 400mA (Tc) 850 mOhm @ 250mA, 4.5V 1V @ 250µA 0.84nC @ 4.5V 35pF @ 10V 200mW Surface Mount SC-70, SOT-323