| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP5P10 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 100V | 4.5A (Tc) | 1.05 Ohm @ 2.25A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 40W | Through Hole | TO-220-3 | |
| FQI5P10TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 100V | 4.5A (Tc) | 1.05 Ohm @ 2.25A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 3.75W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| FQB5P10TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 100V | 4.5A (Tc) | 1.05 Ohm @ 2.25A, 10V | 4V @ 250µA | 8.2nC @ 10V | 250pF @ 25V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SIA425EDJ-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 4.5A (Tc) | 60 mOhm @ 4.2A, 4.5V | 1V @ 250µA | - | - | 15.6W | Surface Mount | PowerPAK® SC-70-6 | |
| SI9433BDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 4.5A (Tc) | 40 mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SIA813DJ-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 4.5A (Tc) | 94 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13nC @ 8V | 355pF @ 10V | 6.5W | Surface Mount | PowerPAK® SC-70-6 Dual | |
| SIA811DJ-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 4.5A (Tc) | 94 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13nC @ 8V | 355pF @ 10V | 6.5W | Surface Mount | PowerPAK® SC-70-6 Dual | |
| SIA811DJ-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 4.5A (Tc) | 94 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13nC @ 8V | 355pF @ 10V | 6.5W | Surface Mount | PowerPAK® SC-70-6 Dual |
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