400V,Drain to Source Voltage (Vdss)
3A (Tc),Current - Continuous Drain (Id) @ 25°C
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF5N40 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.6 Ohm @ 1.5A, 10V 4V @ 250µA 13nC @ 10V 460pF @ 25V 35W Through Hole TO-220-3 Full Pack
2N6800 MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1 Ohm @ 2A, 10V 4V @ 250µA 5.75nC @ 10V - 800mW Through Hole TO-205AF
STD5NK40ZT4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.8 Ohm @ 1.5A, 10V 4.5V @ 50µA 17nC @ 10V 305pF @ 25V 45W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
2N6800U MICROSEMI COMMERCIAL BUSINESS UNIT
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1 Ohm @ 2A, 10V 4V @ 250µA 5.75nC @ 10V - 800mW - -
JAN2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW Through Hole TO-205AF
JANTX2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTXV2N6800 MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JAN2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTX2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -
JANTXV2N6800U MICROSEMI CORP
MOSFET N-Channel, Metal Oxide 400V 3A (Tc) 1.1 Ohm @ 3A, 10V 4V @ 250µA 34.75nC @ 10V - 800mW - -