| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQNL2N50BBU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 500V | 350mA (Tc) | 5.3 Ohm @ 175mA, 10V | 3.7V @ 250µA | 8nC @ 10V | 230pF @ 25V | 1.5W | Through Hole | TO-226-3, TO-92-3 Long Body | |
| NX3008NBKS,115 | NXP SEMICONDUCTORS | 2 N-Channel (Dual) | 30V | 350mA (Tc) | 1.4 Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | 445mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| 2N7000 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 60V | 350mA (Tc) | 5 Ohm @ 500mA, 10V | 3V @ 250µA | 2nC @ 5V | 43pF @ 25V | 1W | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |
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