3.6A (Tc),Current - Continuous Drain (Id) @ 25°C
TO-220-3,Package / Case
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXTP3N50P IXYS CORP
MOSFET N-Channel, Metal Oxide 500V 3.6A (Tc) 2 Ohm @ 1.8A, 10V 5.5V @ 50µA 9.3nC @ 10V 409pF @ 25V 70W Through Hole TO-220-3
IXTP4N80P IXYS CORP
MOSFET N-Channel, Metal Oxide 800V 3.6A (Tc) 3.4 Ohm @ 500mA, 10V 5.5V @ 100µA 14.2nC @ 10V 750pF @ 25V 100W Through Hole TO-220-3
FQP4N25 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 3.6A (Tc) 1.75 Ohm @ 1.8A, 10V 5V @ 250µA 5.6nC @ 10V 200pF @ 25V 52W Through Hole TO-220-3
FQP4N20 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 200V 3.6A (Tc) 1.4 Ohm @ 1.8A, 10V 5V @ 250µA 6.5nC @ 10V 220pF @ 25V 45W Through Hole TO-220-3
FQP3N90 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 900V 3.6A (Tc) 4.25 Ohm @ 1.8A, 10V 5V @ 250µA 26nC @ 10V 910pF @ 25V 130W Through Hole TO-220-3
BUZ80A INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 800V 3.6A (Tc) 3 Ohm @ 2A, 10V 4V @ 1mA - 1350pF @ 25V 100W Through Hole TO-220-3
IRFB812PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 500V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 5V @ 250µA 20nC @ 10V 810pF @ 25V 78W Through Hole TO-220-3
IXFP3N80 IXYS CORP
MOSFET N-Channel, Metal Oxide 800V 3.6A (Tc) 3.6 Ohm @ 500mA, 10V 4.5V @ 1mA 24nC @ 10V 685pF @ 25V 100W Through Hole TO-220-3
IRFBC30A VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 4.5V @ 250µA 23nC @ 10V 510pF @ 25V 74W Through Hole TO-220-3
IRFBC30PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 4V @ 250µA 31nC @ 10V 660pF @ 25V 74W Through Hole TO-220-3