| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB260N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 27A | 25.7 mOhm @ 27A, 10V | 4V @ 11µA | 15nC @ 10V | 1200pF @ 30V | 36W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRF8308MTRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 27A | 2.5 mOhm @ 27A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | 4404pF @ 15V | 2.8W | Surface Mount | - | |
| 2SJ665-DL-E | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 100V | 27A | 77 mOhm @ 14A, 10V | 2.6V @ 1mA | 74nC @ 10V | 4200pF @ 20V | 1.65W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| UPA2813T1L-E2-AT | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 30V | 27A | 6.2 mOhm @ 27A, 10V | - | 80nC @ 10V | 3130pF @ 10V | 1.5W | Surface Mount | 8-PowerVDFN | |
| CSD87312Q3E | TEXAS INSTRUMENTS INC | 2 N-Channel (Dual) Common Source | 30V | 27A | 33 mOhm @ 7A , 8V | 1.3V @ 250µA | 8.2nC @ 4.5V | 1250pF @ 15V | 2.5W | Surface Mount | 8-TDFN Exposed Pad |
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