2.6A,Current - Continuous Drain (Id) @ 25°C
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
HUFA75307T3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 55V 2.6A 90 mOhm @ 2.6A, 10V 4V @ 250µA 17nC @ 20V 250pF @ 25V 1.1W Surface Mount TO-261-4, TO-261AA
FDME1023PZT FAIRCHILD SEMICONDUCTOR CORP
2 P-Channel (Dual) 20V 2.6A 142 mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7nC @ 4.5V 405pF @ 10V 600mW Surface Mount 6-WDFN Exposed Pad
BSO615N G INFINEON TECHNOLOGIES AG
2 N-Channel (Dual) 60V 2.6A 150 mOhm @ 2.6A, 4.5V 2V @ 20µA 20nC @ 10V 380pF @ 25V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
BSO615N INFINEON TECHNOLOGIES AG
2 N-Channel (Dual) 60V 2.6A 150 mOhm @ 2.6A, 4.5V 2V @ 20µA 20nC @ 10V 380pF @ 25V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
BUK98150-55,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 2.6A 150 mOhm @ 5A, 5V 2V @ 1mA - 330pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
SI2302CDS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.6A 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2304BDS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 2.6A 70 mOhm @ 2.5A, 10V 3V @ 250µA 4nC @ 5V 225pF @ 15V 750mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI7956DP-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 150V 2.6A 105 mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual
SIB911DK-T1-GE3 VISHAY SILICONIX
2 P-Channel (Dual) 20V 2.6A 295 mOhm @ 1.5A, 4.5V 1V @ 250µA 4nC @ 8V 115pF @ 10V 3.1W Surface Mount PowerPAK® SC-75-6L Dual
SI7956DP-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 150V 2.6A 105 mOhm @ 4.1A, 10V 4V @ 250µA 26nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual