| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDP19N40 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 400V | 19A (Tc) | 240 mOhm @ 9.5A, 10V | 5V @ 250µA | 40nC @ 10V | 2115pF @ 25V | 215W | Through Hole | TO-220-3 | |
| NTD6416ANLT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 19A (Tc) | 74 mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | 1000pF @ 25V | 71W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NTD6416ANL-1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 19A (Tc) | 74 mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | 1000pF @ 25V | 71W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| STP19NB20 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 200V | 19A (Tc) | 180 mOhm @ 9.5A, 10V | 5V @ 250µA | 40nC @ 10V | 1000pF @ 25V | 125W | Through Hole | TO-220-3 | |
| SUD19P06-60L-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 19A (Tc) | 60 mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | 2.7W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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