1.8A (Ta),Current - Continuous Drain (Id) @ 25°C
11nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SFM9014TF FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 1.8A (Ta) 500 mOhm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 350pF @ 25V 2.8W Surface Mount TO-261-4, TO-261AA
TPC8012-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 200V 1.8A (Ta) 400 mOhm @ 900mA, 10V 5V @ 1mA 11nC @ 10V 440pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)