| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2300UFB4-7B | DIODES INC | MOSFET N-Channel, Metal Oxide | 20V | 1.3A (Ta) | 175 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | 470mW | Surface Mount | 3-XFDFN | |
| NDS331N | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 20V | 1.3A (Ta) | 160 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 162pF @ 10V | 460mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| DMN2600UFB-7 | DIODES INC | MOSFET N-Channel, Metal Oxide | 25V | 1.3A (Ta) | 350 mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.85nC @ 4.5V | 70.13pF @ 15V | 540mW | Surface Mount | 3-UFDFN | |
| NDS331N_D87Z | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 20V | 1.3A (Ta) | 160 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 162pF @ 10V | 460mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| EC4407KF-TR | SANYO SEMICONDUCTOR CO LTD | MOSFET N-Channel, Metal Oxide | 20V | 1.3A (Ta) | 224 mOhm @ 600mA, 4V | - | 4.5nC @ 10V | 100pF @ 10V | 400mW | Surface Mount | 4-XFDFN | |
| IRLD120PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFD120PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFD123PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFD120 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| SI1072X-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 1.3A (Ta) | 93 mOhm @ 1.3A, 10V | 3V @ 250µA | 8.3nC @ 10V | 280pF @ 15V | 236mW | Surface Mount | SOT-563, SOT-666 |
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