650V,Drain to Source Voltage (Vdss)
160W,Power - Max
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STB35N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 160W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP11NM60 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 160W Through Hole TO-220-3
STB24NM65N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 19A (Tc) 190 mOhm @ 9.5A, 10V 4V @ 250µA 70nC @ 10V 2500pF @ 50V 160W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STI35N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 160W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQP7N65C FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 650V 7A (Tc) 1.4 Ohm @ 3.5A, 10V 4V @ 250µA 36nC @ 10V 1245pF @ 25V 160W Through Hole TO-220-3
STW35N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 160W Through Hole TO-247-3
STP24NM65N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 19A (Tc) 190 mOhm @ 9.5A, 10V 4V @ 250µA 70nC @ 10V 2500pF @ 50V 160W Through Hole TO-220-3
STW24NM65N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 19A (Tc) 190 mOhm @ 9.5A, 10V 4V @ 250µA 70nC @ 10V 2500pF @ 50V 160W Through Hole TO-247-3
STP35N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 27A (Tc) 98 mOhm @ 13.5A, 10V 5V @ 250µA 83nC @ 10V 3750pF @ 100V 160W Through Hole TO-220-3
STB11NM60T4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 160W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB