| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD031N06L3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 100A | 3.1 mOhm @ 100A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | 13000pF @ 30V | 167W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| PSMN4R6-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | 4426pF @ 30V | 211W | Through Hole | TO-220-3 | |
| 2SK4066-DL-E | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.7 mOhm @ 50A, 10V | - | 220nC @ 10V | 12500pF @ 20V | 1.65W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| 2SK4066-E | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.7 mOhm @ 50A, 10V | - | 220nC @ 10V | 12500pF @ 20V | 1.65W | Through Hole | TO-220-3, Short Tab | |
| N0601N-ZK-E1-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.2 mOhm @ 50A, 10V | - | 133nC @ 10V | 7730pF @ 25V | 1.5W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| N0602N-S19-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.6 mOhm @ 50A, 10V | - | 133nC @ 10V | 7730pF @ 25V | 1.5W | Through Hole | TO-220-3 Isolated Tab | |
| N0603N-S23-AY | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.6 mOhm @ 50A, 10V | - | 133nC @ 10V | 7730pF @ 25V | 1.5W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| RJK0602DPN-E0#T2 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A | 3.9 mOhm @ 50A, 10V | - | 90nC @ 10V | 6450pF @ 10V | 150W | Through Hole | TO-220-3 |
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