600V,Drain to Source Voltage (Vdss)
600V,Drain to Source Voltage (Vdss)
481W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FCH072N60F FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 52A (Tc) 72 mOhm @ 26A, 10V 5V @ 250µA 215nC @ 10V 8660pF @ 100V 481W Through Hole TO-247-3
IPW60R041C6 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 600V 77.5A (Tc) 41 mOhm @ 44.4A, 10V 3.5V @ 2.96mA 290nC @ 10V 6530pF @ 10V 481W Through Hole TO-247-3
APT77N60BC6 MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 77A (Tc) 41 mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260nC @ 10V 13600pF @ 25V 481W Through Hole TO-247-3
APT77N60SC6 MICROSEMI POWER PRODUCTS GROUP
MOSFET N-Channel, Metal Oxide 600V 77A (Tc) 41 mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260nC @ 10V 13600pF @ 25V 481W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB