600V,Drain to Source Voltage (Vdss)
3.5V @ 250µA,Vgs(th) (Max) @ Id
208W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FCP190N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 208W Through Hole TO-220-3
FCP190N60E FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 208W Through Hole TO-220-3
FCP190N60_GF102 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 208W Through Hole TO-220-3