600V,Drain to Source Voltage (Vdss)
600V,Drain to Source Voltage (Vdss)
13A (Tc),Current - Continuous Drain (Id) @ 25°C
21 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FCPF13N60NT FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 258 mOhm @ 6.5A, 10V 4V @ 250µA 39.5nC @ 10V 1765pF @ 100V 33.8W Through Hole TO-220-3 Full Pack
STB13NK60ZT4 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 150W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP13NK60ZFP STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 35W Through Hole TO-220-3 Full Pack
STW13NK60Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 150W Through Hole TO-247-3
STW19NM60N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 285 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 110W Through Hole TO-247-3
STP18NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 130W - -
STF18NM60ND STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 30W - -
IXKP13N60C5 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 300 mOhm @ 6.6A, 10V 3.5V @ 440µA 30nC @ 10V 1100pF @ 100V - Through Hole TO-220-3
STF18NM60N STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 285 mOhm @ 6.5A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 30W Through Hole TO-220-3 Full Pack
STFI13NK60Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 600V 13A (Tc) 550 mOhm @ 4.5A, 10V 4.5V @ 100µA 92nC @ 10V 2030pF @ 25V 35W Through Hole TO-262-3 Full Pack, I²Pak