600V,Drain to Source Voltage (Vdss)
600V,Drain to Source Voltage (Vdss)
180W,Power - Max
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQP12N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 10.5A (Tc) 700 mOhm @ 5.3A, 10V 5V @ 250µA 54nC @ 10V 1900pF @ 25V 180W Through Hole TO-220-3
IXFA7N60P3 IXYS CORP
MOSFET N-Channel, Metal Oxide 600V 7A (Tc) 1.15 Ohm @ 3.5A, 10V 5V @ 1mA 13.3nC @ 10V 705pF @ 25V 180W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHP15N60E-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 76nC @ 10V 1350pF @ 100V 180W Through Hole TO-220-3 Full Pack
SIHF15N60E-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 76nC @ 10V 1350pF @ 100V 180W Through Hole TO-220-3 Full Pack
IRFPC50PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 600 mOhm @ 6A, 10V 4V @ 250µA 140nC @ 10V 2700pF @ 25V 180W Through Hole TO-247-3
IRFPC50APBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 580 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 2100pF @ 25V 180W Through Hole TO-247-3
SIHB15N60E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 76nC @ 10V 1350pF @ 100V 180W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHP15N60E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 180W Through Hole TO-220-3
IRFPC50 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 600 mOhm @ 6A, 10V 4V @ 250µA 140nC @ 10V 2700pF @ 25V 180W Through Hole TO-247-3
IRFPC50A VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 600V 11A (Tc) 580 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 2100pF @ 25V 180W Through Hole TO-247-3