600V,Drain to Source Voltage (Vdss)
3.13W,Power - Max
TO-262-3 Long Leads, I²Pak, TO-262AA,Package / Case
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQI5N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 4.5A (Tc) 2.5 Ohm @ 2.25A, 10V 4V @ 250µA 19nC @ 10V 670pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI8N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 7.5A (Tc) 1.2 Ohm @ 3.75A, 10V 4V @ 250µA 36nC @ 10V 1255pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI7N60TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 7.4A (Tc) 1 Ohm @ 3.7A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI10N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 9.5A (Tc) 730 mOhm @ 4.75A, 10V 4V @ 250µA 57nC @ 10V 2040pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI12N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FQI12N60TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 10.5A (Tc) 700 mOhm @ 5.3A, 10V 5V @ 250µA 54nC @ 10V 1900pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA