40V,Drain to Source Voltage (Vdss)
68W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TJ40S04M3L(T6L1,NQ TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 40V 40A (Ta) 9.1 mOhm @ 20A, 10V 3V @ 1mA 83nC @ 10V 4140pF @ 10V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPP065N04N G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 50A (Tc) 6.5 mOhm @ 50A, 10V 4V @ 200µA 34nC @ 10V 2800pF @ 20V 68W Through Hole TO-220-3
IPD50N04S3-08 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 4V @ 40µA 35nC @ 10V 2350pF @ 25V 68W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9K6R2-40E,115 NXP SEMICONDUCTORS
2 N-Channel (Dual) 40V 40A 6 mOhm @ 25A, 10V 2.1V @ 1mA 35.4nC @ 10V 3281pF @ 25V 68W Surface Mount SOT1205, 8-LFPAK56
BUK7K6R2-40EX NXP SEMICONDUCTORS
2 N-Channel (Dual) 40V 40A 5.8 mOhm @ 20A, 10V 4V @ 1mA 32.3nC @ 10V 2210pF @ 25V 68W Surface Mount SOT1205, 8-LFPAK56
SQJ848EP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 40V 47A (Tc) 9 mOhm @ 10.3A, 10V 2.5V @ 250µA 55nC @ 10V 2500pF @ 20V 68W Surface Mount PowerPAK® SO-8